AUIRF7103Q
Features l Advanced Planar Technology l Dual N Channel MOSFET l Low On-Resistance l Dynamic d V/d T Rating l 175°C Operating Temperature l Fast Switching l Lead-Free, Ro HS pliant l Automotive Qualified-
AUTOMOTIVE GRADE
HEXFET® Power MOSFET
S1 1 G1 2 S2 3 G2 4
8 D1 7 D1 6 D2 5 D2
Top View
V(BR)DSS RDS(on) max. ID
50V 130m
3.0A
Description
Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit bined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.
SO-8 AUIRF7103Q
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and...
